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HiPerFET TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
IXFJ 32N50Q V DSS
I D(cont)
R DS(on)
t rr
= 500
= 32
= 0.15
< 250
V
A
W
ns
Avalanche Rated
High dv/dt, Low t rr , HDMOS TM Family
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 150 ° C
500
V
V DGR
V GS
T J = 25 ° C to 150 ° C; R GS = 1 M W
Continuous
500
± 20
V
V
G
D
S
é
(TAB)
V GSM
Transient
± 30
V
I D25
I DM
I AR
E As
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
32
128
32
1.5
A
A
A
J
G = Gate,
S = Source,
D = Drain,
TAB = Drain
E AR
dv/dt
P D
T J
T JM
T stg
T L
T C = 25 ° C
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
45
5
360
-55 ... +150
150
-55 ... +150
300
mJ
V/ns
W
° C
° C
° C
° C
Features
? Low profile, high power package
? Long creep and strike distances
? Easy up-grade path for TO-220
designs
? Low R DS (on) low Qg process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
- easy to drive and to protect
? Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
?
?
?
?
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
V DSS
V GS = 0 V, I D = 250 m A
500
V
?
power supplies
DC choppers
V GS(th)
I GSS
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
2
4
± 100
V
nA
?
?
?
AC motor control
Temperature and lighting controls
Low voltage relays
I DSS
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
100
1
m A
mA
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
0.15
W
? High power, low profile package
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98579B (5/31/00)
1-4
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